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0RFQ / Ordú

Trasraitheoirí - FETnna, MOSFETanna - Aonai

BUK9608-55A,118
Nexperia USA Inc.

BUK9608-55A,118

cuid stoc: 81443

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 55V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 75A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V,

Le Liosta Mianta
BSS138LT3
ON Semiconductor

BSS138LT3

cuid stoc: 281

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 50V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 200mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V,

Le Liosta Mianta
BSS123LT3
ON Semiconductor

BSS123LT3

cuid stoc: 305

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 170mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V,

Le Liosta Mianta
BSS123LT3G
ON Semiconductor

BSS123LT3G

cuid stoc: 251

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 170mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V,

Le Liosta Mianta
BS170RLRPG
ON Semiconductor

BS170RLRPG

cuid stoc: 339

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 500mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Le Liosta Mianta
BS170RLRP
ON Semiconductor

BS170RLRP

cuid stoc: 277

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 500mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Le Liosta Mianta
BS170G
ON Semiconductor

BS170G

cuid stoc: 6047

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 500mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Le Liosta Mianta
BS108G
ON Semiconductor

BS108G

cuid stoc: 5654

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 2V, 2.8V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 100mA, 2.8V,

Le Liosta Mianta
BS107G
ON Semiconductor

BS107G

cuid stoc: 6088

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 2.6V, 10V, Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V,

Le Liosta Mianta
BS107ARL1G
ON Semiconductor

BS107ARL1G

cuid stoc: 245

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V,

Le Liosta Mianta
BS107ARL1
ON Semiconductor

BS107ARL1

cuid stoc: 306

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 250mA, 10V,

Le Liosta Mianta
BS170P
Diodes Incorporated

BS170P

cuid stoc: 82285

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 270mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V,

Le Liosta Mianta
BSS87L6327HTSA1
Infineon Technologies

BSS87L6327HTSA1

cuid stoc: 311

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 240V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 260mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V,

Le Liosta Mianta
BSS84PW
Infineon Technologies

BSS84PW

cuid stoc: 246

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 150mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V,

Le Liosta Mianta
BSS84PL6327HTSA1
Infineon Technologies

BSS84PL6327HTSA1

cuid stoc: 264

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 170mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

Le Liosta Mianta
BSS192PL6327HTSA1
Infineon Technologies

BSS192PL6327HTSA1

cuid stoc: 303

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 250V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 190mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 2.8V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V,

Le Liosta Mianta
BSS7728N
Infineon Technologies

BSS7728N

cuid stoc: 298

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 200mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Le Liosta Mianta
BSS138NL6327HTSA1
Infineon Technologies

BSS138NL6327HTSA1

cuid stoc: 227

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 230mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Le Liosta Mianta
BSS138W E6327
Infineon Technologies

BSS138W E6327

cuid stoc: 295

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 280mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Le Liosta Mianta
BSS123L6327HTSA1
Infineon Technologies

BSS123L6327HTSA1

cuid stoc: 228

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 170mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Le Liosta Mianta
BSP92PL6327HTSA1
Infineon Technologies

BSP92PL6327HTSA1

cuid stoc: 265

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 250V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 260mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Le Liosta Mianta
BSP89L6327HTSA1
Infineon Technologies

BSP89L6327HTSA1

cuid stoc: 257

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 240V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 350mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Le Liosta Mianta
BSP613PL6327HUSA1
Infineon Technologies

BSP613PL6327HUSA1

cuid stoc: 321

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V,

Le Liosta Mianta
BSP372L6327HTSA1
Infineon Technologies

BSP372L6327HTSA1

cuid stoc: 290

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V,

Le Liosta Mianta
BSP373L6327HTSA1
Infineon Technologies

BSP373L6327HTSA1

cuid stoc: 6061

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V,

Le Liosta Mianta
BSP316PL6327HTSA1
Infineon Technologies

BSP316PL6327HTSA1

cuid stoc: 238

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 680mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V,

Le Liosta Mianta
BSP317PL6327HTSA1
Infineon Technologies

BSP317PL6327HTSA1

cuid stoc: 303

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 250V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 430mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V,

Le Liosta Mianta
BSP297L6327HTSA1
Infineon Technologies

BSP297L6327HTSA1

cuid stoc: 301

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 660mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Le Liosta Mianta
BSP315PL6327HTSA1
Infineon Technologies

BSP315PL6327HTSA1

cuid stoc: 253

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.17A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V,

Le Liosta Mianta
BSP296L6327HTSA1
Infineon Technologies

BSP296L6327HTSA1

cuid stoc: 270

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.1A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

Le Liosta Mianta
BSP295L6327HTSA1
Infineon Technologies

BSP295L6327HTSA1

cuid stoc: 290

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V,

Le Liosta Mianta
BSP171PL6327HTSA1
Infineon Technologies

BSP171PL6327HTSA1

cuid stoc: 6106

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Le Liosta Mianta
BSP170PL6327HTSA1
Infineon Technologies

BSP170PL6327HTSA1

cuid stoc: 276

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Le Liosta Mianta
BSO300N03S
Infineon Technologies

BSO300N03S

cuid stoc: 251

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V,

Le Liosta Mianta
BSO200N03S
Infineon Technologies

BSO200N03S

cuid stoc: 232

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V,

Le Liosta Mianta
BSO072N03S
Infineon Technologies

BSO072N03S

cuid stoc: 276

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V,

Le Liosta Mianta