Trasraitheoirí - FETnna, MOSFETanna - Aonai

2N7639-GA

cuid stoc: 318

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

cuid stoc: 339

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc) (158°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

cuid stoc: 369

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

cuid stoc: 431

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

cuid stoc: 376

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Tc) (165°C), Rds On (Max) @ Id, Vgs: 415 mOhm @ 4A,

2N7640-GA

cuid stoc: 339

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A (Tc) (155°C), Rds On (Max) @ Id, Vgs: 105 mOhm @ 16A,

GA10SICP12-263

cuid stoc: 1777

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A,

GA50JT06-258

cuid stoc: 161

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT03-46

cuid stoc: 1073

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 300V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA50JT12-247

cuid stoc: 733

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT01-46

cuid stoc: 1236

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Tc), Rds On (Max) @ Id, Vgs: 240 mOhm @ 5A,

GA04JT17-247

cuid stoc: 2389

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A,

GA08JT17-247

cuid stoc: 1402

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 250 mOhm @ 8A,

GA20JT12-263

cuid stoc: 1840

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 45A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 20A,

GA10JT12-263

cuid stoc: 3360

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Rds On (Max) @ Id, Vgs: 120 mOhm @ 10A,

GA05JT12-263

cuid stoc: 5916

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15A (Tc),

GA50JT12-263

cuid stoc: 816

GA100JT17-227

cuid stoc: 253

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA100JT12-227

cuid stoc: 460

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 160A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 100A,

GA20JT12-247

cuid stoc: 2717

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Tc), Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A,

GA16JT17-247

cuid stoc: 925

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 110 mOhm @ 16A,

GA10JT12-247

cuid stoc: 3338

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Tc), Rds On (Max) @ Id, Vgs: 140 mOhm @ 10A,

GA03JT12-247

cuid stoc: 7277

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 460 mOhm @ 3A,

GA20SICP12-247

cuid stoc: 1734

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 45A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A,

GA50JT17-247

cuid stoc: 438

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT12-247

cuid stoc: 10854

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A (Tc), Rds On (Max) @ Id, Vgs: 280 mOhm @ 5A,

GA06JT12-247

cuid stoc: 6819

Teicneolaíocht: SiC (Silicon Carbide Junction Transistor), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A (Tc) (90°C), Rds On (Max) @ Id, Vgs: 220 mOhm @ 6A,