Trasraitheoirí - FETnna, MOSFETanna - Aonai

GP1M006A065FH

GP1M006A065FH

cuid stoc: 1940

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.75A, 10V,

GP1M016A025FG

GP1M016A025FG

cuid stoc: 1941

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 250V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 10V,

GP1M010A080N

GP1M010A080N

cuid stoc: 1882

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 5A, 10V,

GP2M020A050H

GP2M020A050H

cuid stoc: 1876

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V,

GP1M013A050FH

GP1M013A050FH

cuid stoc: 1865

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V,

GP2M007A080F

GP2M007A080F

cuid stoc: 1878

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

GP2M005A060FG

GP2M005A060FG

cuid stoc: 1887

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V,

GP2M023A050N

GP2M023A050N

cuid stoc: 1880

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 23A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 220 mOhm @ 11.5A, 10V,

GP1M009A020PG

GP1M009A020PG

cuid stoc: 1897

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V,

GP2M005A050CG

GP2M005A050CG

cuid stoc: 1893

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.25A, 10V,

GP1M011A050H

GP1M011A050H

cuid stoc: 6224

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 670 mOhm @ 5.5A, 10V,

GP1M010A080H

GP1M010A080H

cuid stoc: 1957

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 4.75A, 10V,

GP1M011A050FSH

GP1M011A050FSH

cuid stoc: 1877

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V,

GP2M005A060HG

GP2M005A060HG

cuid stoc: 1932

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V,

GP2M020A050F

GP2M020A050F

cuid stoc: 1933

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V,

GP2M010A065F

GP2M010A065F

cuid stoc: 1955

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 820 mOhm @ 4.75A, 10V,

GP1M007A065CG

GP1M007A065CG

cuid stoc: 1912

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.25A, 10V,

GP1M005A050FH

GP1M005A050FH

cuid stoc: 1857

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V,

GP1M007A090FH

GP1M007A090FH

cuid stoc: 1868

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

GP2M002A065CG

GP2M002A065CG

cuid stoc: 1884

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 900mA, 10V,

GP1M011A050FH

GP1M011A050FH

cuid stoc: 1945

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 670 mOhm @ 5.5A, 10V,

GP1M010A060FH

GP1M010A060FH

cuid stoc: 1854

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V,

GP1M003A090C

GP1M003A090C

cuid stoc: 1887

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1.25A, 10V,

GP2M002A065PG

GP2M002A065PG

cuid stoc: 1936

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 900mA, 10V,

GP2M011A090NG

GP2M011A090NG

cuid stoc: 1949

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 5.5A, 10V,

GP1M015A050H

GP1M015A050H

cuid stoc: 1853

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V,

GP1M016A025CG

GP1M016A025CG

cuid stoc: 6286

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 250V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 8A, 10V,

GP1M003A050PG

GP1M003A050PG

cuid stoc: 1840

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V,

GP2M008A060CG

GP2M008A060CG

cuid stoc: 1940

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V,

GP1M008A050PG

GP1M008A050PG

cuid stoc: 1915

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V,

GP1M005A050PH

GP1M005A050PH

cuid stoc: 1847

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.65 Ohm @ 2.25A, 10V,

GP1M013A050H

GP1M013A050H

cuid stoc: 1877

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 480 mOhm @ 6.5A, 10V,

GP2M005A060CG

GP2M005A060CG

cuid stoc: 1936

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.1A, 10V,

GP1M003A050FG

GP1M003A050FG

cuid stoc: 1876

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.25A, 10V,

GP2M002A060PG

GP2M002A060PG

cuid stoc: 6231

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

GP1M010A060H

GP1M010A060H

cuid stoc: 1926

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V,