Trasraitheoirí - FETnna, MOSFETanna - Aonai

LSIC1MO120E0080

LSIC1MO120E0080

cuid stoc: 1259

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 39A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

LSIC1MO120E0160

LSIC1MO120E0160

cuid stoc: 1034

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 22A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 20V,

LSIC1MO120E0120

LSIC1MO120E0120

cuid stoc: 1693

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 27A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V,