Trasraitheoirí - FETanna, MOSFETanna - Arra

QJD1210010

QJD1210010

cuid stoc: 2869

Cineál FET: 2 N-Channel (Dual), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

QJD1210SA1

cuid stoc: 2941

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SA2

QJD1210SA2

cuid stoc: 2896

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SB1

QJD1210SB1

cuid stoc: 2931

QJD1210011

QJD1210011

cuid stoc: 3308

Cineál FET: 2 N-Channel (Dual), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,