cuid stoc: 2869
Cineál FET: 2 N-Channel (Dual), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,