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Trasraitheoirí - FETnna, MOSFETanna - Aonai

TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A53D(STA4,Q,M)

cuid stoc: 31913

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 525V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V,

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TK8Q60W,S1VQ
Toshiba Semiconductor and Storage

TK8Q60W,S1VQ

cuid stoc: 36648

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V,

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TK3A65DA(STA4,QM)
Toshiba Semiconductor and Storage

TK3A65DA(STA4,QM)

cuid stoc: 54078

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.51 Ohm @ 1.3A, 10V,

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TK14G65W5,RQ
Toshiba Semiconductor and Storage

TK14G65W5,RQ

cuid stoc: 61791

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

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TJ80S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage

TJ80S04M3L(T6L1,NQ

cuid stoc: 75895

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 80A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V,

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TPHR8504PL,L1Q
Toshiba Semiconductor and Storage

TPHR8504PL,L1Q

cuid stoc: 64047

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 150A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 50A, 10V,

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TK100S04N1L,LQ
Toshiba Semiconductor and Storage

TK100S04N1L,LQ

cuid stoc: 59911

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V,

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TK7A65W,S5X
Toshiba Semiconductor and Storage

TK7A65W,S5X

cuid stoc: 40074

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 780 mOhm @ 3.4A, 10V,

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TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK15A50D(STA4,Q,M)

cuid stoc: 43168

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V,

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TK5A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A55D(STA4,Q,M)

cuid stoc: 59442

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 550V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V,

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SSM3K15AFS,LF
Toshiba Semiconductor and Storage

SSM3K15AFS,LF

cuid stoc: 146399

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 2.5V, 4V, Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V,

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TK10V60W,LVQ
Toshiba Semiconductor and Storage

TK10V60W,LVQ

cuid stoc: 45593

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

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TPH2900ENH,L1Q
Toshiba Semiconductor and Storage

TPH2900ENH,L1Q

cuid stoc: 67627

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 33A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 16.5A, 10V,

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TK60E08K3,S1X(S
Toshiba Semiconductor and Storage

TK60E08K3,S1X(S

cuid stoc: 47246

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 75V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A, Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

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TK8A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A60DA(STA4,Q,M)

cuid stoc: 45679

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 4A, 10V,

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TK5A65W,S5X
Toshiba Semiconductor and Storage

TK5A65W,S5X

cuid stoc: 41464

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.2A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.6A, 10V,

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TPCA8064-H,LQ(CM
Toshiba Semiconductor and Storage

TPCA8064-H,LQ(CM

cuid stoc: 77317

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V,

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TK160F10N1L,LQ
Toshiba Semiconductor and Storage

TK160F10N1L,LQ

cuid stoc: 7982

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 160A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V,

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TK3A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK3A60DA(STA4,Q,M)

cuid stoc: 68119

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V,

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TK6A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A50D(STA4,Q,M)

cuid stoc: 60129

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V,

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TK18E10K3,S1X(S
Toshiba Semiconductor and Storage

TK18E10K3,S1X(S

cuid stoc: 56261

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A (Ta), Rds On (Max) @ Id, Vgs: 42 mOhm @ 9A, 10V,

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TK6Q65W,S1Q
Toshiba Semiconductor and Storage

TK6Q65W,S1Q

cuid stoc: 51965

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 2.9A, 10V,

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TK6A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A45DA(STA4,Q,M)

cuid stoc: 65709

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 450V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2.8A, 10V,

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TK7A55D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK7A55D(STA4,Q,M)

cuid stoc: 51660

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 550V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3.5A, 10V,

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TK6Q60W,S1VQ
Toshiba Semiconductor and Storage

TK6Q60W,S1VQ

cuid stoc: 45527

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.2A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V,

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TK9A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK9A45D(STA4,Q,M)

cuid stoc: 48218

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 450V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 770 mOhm @ 4.5A, 10V,

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TK40E10K3,S1X(S
Toshiba Semiconductor and Storage

TK40E10K3,S1X(S

cuid stoc: 43237

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Ta), Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V,

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TPCA8055-H,LQ(M
Toshiba Semiconductor and Storage

TPCA8055-H,LQ(M

cuid stoc: 60456

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 56A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V,

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TK12A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK12A60D(STA4,Q,M)

cuid stoc: 50578

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V,

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TK11A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK11A50D(STA4,Q,M)

cuid stoc: 38250

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 5.5A, 10V,

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TK6A65W,S5X
Toshiba Semiconductor and Storage

TK6A65W,S5X

cuid stoc: 38216

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.9A, 10V,

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TK8A45D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK8A45D(STA4,Q,M)

cuid stoc: 51493

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 450V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V,

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TK5A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

TK5A65DA(STA4,Q,M)

cuid stoc: 51848

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.67 Ohm @ 2.3A, 10V,

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SSM3J327R,LF
Toshiba Semiconductor and Storage

SSM3J327R,LF

cuid stoc: 111963

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 93 mOhm @ 1.5A, 4.5V,

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SSM3K37MFV,L3F
Toshiba Semiconductor and Storage

SSM3K37MFV,L3F

cuid stoc: 146195

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V,

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TK6A53D(STA4,Q,M)
Toshiba Semiconductor and Storage

TK6A53D(STA4,Q,M)

cuid stoc: 55041

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 525V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V,

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