Trasraitheoirí - FETanna, MOSFETanna - Arra

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Trasraitheoirí - FETanna, MOSFETanna - Arra

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

TPCL4202(TE85L,F)

cuid stoc: 2949

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

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TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8304(TE85L,F,M

cuid stoc: 2938

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.2A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

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SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage

SSM6L13TU(T5L,F,T)

cuid stoc: 2912

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, 1.8V Drive, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 800mA (Ta), Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF(D

cuid stoc: 2967

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 2.5V Drive, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6N68NU,LF

cuid stoc: 16268

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 1.8V Drive, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Ta), Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFU,LF

cuid stoc: 9923

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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SSM6N42FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6N42FE(TE85L,F)

cuid stoc: 2976

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 800mA, Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N815R,LF

cuid stoc: 9939

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 4V Drive, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2A (Ta), Rds On (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L35FE,LM

cuid stoc: 172252

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N67NU,LF

cuid stoc: 9963

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 1.8V Drive, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Ta), Rds On (Max) @ Id, Vgs: 39.1 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N35AFE,LF

cuid stoc: 13256

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 1.2V Drive, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6P35FE,LM

cuid stoc: 173905

Cineál FET: 2 P-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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SSM6P15FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P15FE(TE85L,F)

cuid stoc: 13232

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.7V @ 100µA,

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SSM6N37CTD(TPL3)

Toshiba Semiconductor and Storage

SSM6N37CTD(TPL3)

cuid stoc: 2957

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250mA, Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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SSM6P41FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P41FE(TE85L,F)

cuid stoc: 13283

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 720mA, Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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TPC8405(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8405(TE12L,Q,M)

cuid stoc: 3098

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, 4.5A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6N357R,LF

cuid stoc: 16211

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 650mA (Ta), Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

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SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

SSM6P35FE(TE85L,F)

cuid stoc: 121978

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

SSM6L35FU(TE85L,F)

cuid stoc: 156233

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, 1.2V Drive, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 180mA, 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6L61NU,LF

cuid stoc: 154751

Cineál FET: N and P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A,

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Toshiba Semiconductor and Storage

SSM6N48FU,RF

cuid stoc: 3013

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

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SSM6N7002BFU,LF

Toshiba Semiconductor and Storage

SSM6N7002BFU,LF

cuid stoc: 154781

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

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Toshiba Semiconductor and Storage

SSM6N61NU,LF

cuid stoc: 117701

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, 1.5V Drive, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Toshiba Semiconductor and Storage

SSM6P49NU,LF

cuid stoc: 154268

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

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SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

cuid stoc: 9999

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

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Toshiba Semiconductor and Storage

SSM6L36FE,LM

cuid stoc: 107404

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 500mA, 330mA, Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8203(TE85L,F)

cuid stoc: 2780

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.7A, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SSM6N7002BFE(T5L,F

Toshiba Semiconductor and Storage

SSM6N7002BFE(T5L,F

cuid stoc: 2844

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 200mA, Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

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TPC8211(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8211(TE12L,Q,M)

cuid stoc: 2801

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.5A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8213-H(TE12LQ,M

cuid stoc: 2813

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

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TPC8208(TE12L,Q)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q)

cuid stoc: 2694

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

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TPCF8201(TE85L,F,M

Toshiba Semiconductor and Storage

TPCF8201(TE85L,F,M

cuid stoc: 2756

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

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TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

TPC8212-H(TE12LQ,M

cuid stoc: 2781

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

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TPCP8401(TE85L,F)

Toshiba Semiconductor and Storage

TPCP8401(TE85L,F)

cuid stoc: 3345

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA, 5.5A, Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

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TPC8208(TE12L,Q,M)

Toshiba Semiconductor and Storage

TPC8208(TE12L,Q,M)

cuid stoc: 2829

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A, Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

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Toshiba Semiconductor and Storage

TPC8207(TE12L)

cuid stoc: 2650

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

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