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Trasraitheoirí - FETnna, MOSFETanna - Aonai

APT1002RBNG
Microsemi Corporation

APT1002RBNG

cuid stoc: 6299

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

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APT1001RBN
Microsemi Corporation

APT1001RBN

cuid stoc: 2149

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V,

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APT80SM120S
Microsemi Corporation

APT80SM120S

cuid stoc: 2172

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 80A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

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APT80SM120J
Microsemi Corporation

APT80SM120J

cuid stoc: 2121

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

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APT80SM120B
Microsemi Corporation

APT80SM120B

cuid stoc: 2112

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 80A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

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APT70SM70J
Microsemi Corporation

APT70SM70J

cuid stoc: 6264

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 49A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

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APT70SM70S
Microsemi Corporation

APT70SM70S

cuid stoc: 2124

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 65A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

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APT25SM120S
Microsemi Corporation

APT25SM120S

cuid stoc: 2166

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V,

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APT70SM70B
Microsemi Corporation

APT70SM70B

cuid stoc: 2170

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 700V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 65A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

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APT25SM120B
Microsemi Corporation

APT25SM120B

cuid stoc: 2084

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V,

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APT7M120B
Microsemi Corporation

APT7M120B

cuid stoc: 9685

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V,

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APT50MC120JCU2
Microsemi Corporation

APT50MC120JCU2

cuid stoc: 704

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 71A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V,

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APT40SM120S
Microsemi Corporation

APT40SM120S

cuid stoc: 2514

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 41A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

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APT40SM120B
Microsemi Corporation

APT40SM120B

cuid stoc: 1859

Cineál FET: N-Channel, Teicneolaíocht: SiCFET (Silicon Carbide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 41A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

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APTML50UM90R020T1AG
Microsemi Corporation

APTML50UM90R020T1AG

cuid stoc: 1625

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 52A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V,

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APTM120DA30CT1G
Microsemi Corporation

APTM120DA30CT1G

cuid stoc: 1333

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 31A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 25A, 10V,

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APTML20UM18R010T1AG
Microsemi Corporation

APTML20UM18R010T1AG

cuid stoc: 1604

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 109A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V,

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APT14M100S
Microsemi Corporation

APT14M100S

cuid stoc: 8207

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 880 mOhm @ 7A, 10V,

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APT18M80S
Microsemi Corporation

APT18M80S

cuid stoc: 1606

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 19A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 530 mOhm @ 9A, 10V,

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APT12057JLL
Microsemi Corporation

APT12057JLL

cuid stoc: 1638

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 19A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V,

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APT53N60SC6
Microsemi Corporation

APT53N60SC6

cuid stoc: 1604

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 53A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V,

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APT12067JLL
Microsemi Corporation

APT12067JLL

cuid stoc: 1582

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V,

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APTM100DA18CT1G
Microsemi Corporation

APTM100DA18CT1G

cuid stoc: 6180

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V,

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APTC60DAM24CT1G
Microsemi Corporation

APTC60DAM24CT1G

cuid stoc: 1620

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V,

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APTC90DAM60CT1G
Microsemi Corporation

APTC90DAM60CT1G

cuid stoc: 1078

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 59A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V,

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APT33N90JCCU3
Microsemi Corporation

APT33N90JCCU3

cuid stoc: 1668

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 33A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

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APT33N90JCCU2
Microsemi Corporation

APT33N90JCCU2

cuid stoc: 2047

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 33A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

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APT20M120JCU3
Microsemi Corporation

APT20M120JCU3

cuid stoc: 2243

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

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APT20M120JCU2
Microsemi Corporation

APT20M120JCU2

cuid stoc: 2294

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

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APT5014SLLG/TR
Microsemi Corporation

APT5014SLLG/TR

cuid stoc: 6205

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 35A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V,

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APT38N60SC6
Microsemi Corporation

APT38N60SC6

cuid stoc: 1657

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 38A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V,

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APTML60U12R020T1AG
Microsemi Corporation

APTML60U12R020T1AG

cuid stoc: 1584

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 45A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V,

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APT30N60SC6
Microsemi Corporation

APT30N60SC6

cuid stoc: 6234

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

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APT17F100S
Microsemi Corporation

APT17F100S

cuid stoc: 6915

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 780 mOhm @ 9A, 10V,

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APT9F100S
Microsemi Corporation

APT9F100S

cuid stoc: 1569

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 1000V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 5A, 10V,

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APT11F80S
Microsemi Corporation

APT11F80S

cuid stoc: 1633

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V,

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