Trasraitheoirí - FETanna, MOSFETanna - Arra | Táirgí Leathsheoltóra Scoite | 7

2N7335

cuid stoc: 2928

Cineál FET: 4 P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 750mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

2N7334

cuid stoc: 2895

Cineál FET: 4 N-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1A, Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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Microsemi Corporation

APTC60DSKM24T3G

cuid stoc: 765

Cineál FET: 2 N Channel (Dual Buck Chopper), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45STG

cuid stoc: 605

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTMC120TAM33CTPAG

cuid stoc: 107

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 78A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 3mA (Typ),

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Microsemi Corporation

APTM50H14FT3G

cuid stoc: 1149

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 26A, Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC120AM25CT3AG

cuid stoc: 283

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 113A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 4mA (Typ),

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Microsemi Corporation

APTSM120AM08CT6AG

cuid stoc: 144

Cineál FET: 2 N-Channel (Dual), Schottky, Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 370A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 3V @ 10mA,

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Microsemi Corporation

APTSM120TAM33CTPAG

cuid stoc: 177

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 112A (Tc), Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 3V @ 3mA,

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Microsemi Corporation

APTSM120AM09CD3AG

cuid stoc: 195

Cineál FET: 2 N-Channel (Dual), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM14CD3AG

cuid stoc: 248

Cineál FET: 2 N-Channel (Dual), Schottky, Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 337A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

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Microsemi Corporation

APTSM120AM55CT1AG

cuid stoc: 589

Cineál FET: 2 N-Channel (Dual), Schottky, Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 74A (Tc), Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 3V @ 2mA,

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Microsemi Corporation

APTSM120AM25CT3AG

cuid stoc: 290

Cineál FET: 2 N-Channel (Dual), Schottky, Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 148A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 3V @ 4mA,

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Microsemi Corporation

APTMC120AM08CD3AG

cuid stoc: 68

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 250A (Tc), Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 10mA (Typ),

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Microsemi Corporation

APTM50HM65FT3G

cuid stoc: 692

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM38STG

cuid stoc: 559

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM100H45SCTG

cuid stoc: 480

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A13SCG

cuid stoc: 292

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM50AM24SCG

cuid stoc: 372

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 150A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTM120H140FT1G

cuid stoc: 1785

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50H10FT3G

cuid stoc: 1187

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM100A13DG

cuid stoc: 505

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 65A, Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

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Microsemi Corporation

APTC60VDAM24T3G

cuid stoc: 1155

Cineál FET: 2 N-Channel (Dual), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM100H45FT3G

cuid stoc: 858

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A, Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100A18FTG

cuid stoc: 728

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 43A, Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTMC120TAM12CTPAG

cuid stoc: 63

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 220A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

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Microsemi Corporation

APTM20HM20FTG

cuid stoc: 799

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 89A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T3G

cuid stoc: 1635

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTC60AM35SCTG

cuid stoc: 860

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 36A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC80DDA15T3G

cuid stoc: 1954

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50HM75FT3G

cuid stoc: 880

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60AM242G

cuid stoc: 951

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTM50AM19FG

cuid stoc: 440

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 163A, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM120DU15G

cuid stoc: 383

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC60DDAM35T3G

cuid stoc: 1490

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTC60TAM24TPG

cuid stoc: 401

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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