Trasraitheoirí - FETanna, MOSFETanna - Arra | Táirgí Leathsheoltóra Scoite | 7

APTM20DUM05G

cuid stoc: 536

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 317A, Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H35FTG

cuid stoc: 731

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM35FTG

cuid stoc: 766

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50HM65FTG

cuid stoc: 767

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM100TA35FPG

cuid stoc: 533

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60HM70T1G

cuid stoc: 1743

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 39A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

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Microsemi Corporation

APTM50HM35FG

cuid stoc: 448

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM60A11FT1G

cuid stoc: 2026

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A, Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTC60DHM24T3G

cuid stoc: 1204

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTC60AM24SCTG

cuid stoc: 712

Cineál FET: 2 N Channel (Phase Leg), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

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Microsemi Corporation

APTMC120HM17CT3AG

cuid stoc: 306

Cineál FET: 4 N-Channel, Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 147A (Tc), Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

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Microsemi Corporation

APTM50DDA10T3G

cuid stoc: 1671

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50HM38FG

cuid stoc: 461

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120A15FG

cuid stoc: 396

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTC80TDU15PG

cuid stoc: 936

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM17FG

cuid stoc: 423

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10DUM02G

cuid stoc: 488

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 495A, Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

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Microsemi Corporation

APTMC170AM60CT1AG

cuid stoc: 196

Cineál FET: 2 N Channel (Phase Leg), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1700V (1.7kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 50A (Tc), Rds On (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

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Microsemi Corporation

APTC60VDAM45T1G

cuid stoc: 1797

Cineál FET: 2 N-Channel (Dual), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTM120H29FG

cuid stoc: 261

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A, Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM10HM05FG

cuid stoc: 446

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM50H15FT1G

cuid stoc: 2107

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTMC170AM30CT1AG

cuid stoc: 139

Cineál FET: 2 N Channel (Phase Leg), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1700V (1.7kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Tc), Rds On (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 5mA (Typ),

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Microsemi Corporation

APTM08TAM04PG

cuid stoc: 1065

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 75V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 120A, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM20HM08FG

cuid stoc: 381

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FG

cuid stoc: 433

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 317A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM10HM09FT3G

cuid stoc: 940

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM19FT3G

cuid stoc: 1470

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTC60HM83FT2G

cuid stoc: 1719

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 36A, Rds On (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

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Microsemi Corporation

APTC80H15T1G

cuid stoc: 1728

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTM50AM38SCTG

cuid stoc: 599

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 90A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20HM10FG

cuid stoc: 489

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTC60HM45SCTG

cuid stoc: 743

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Super Junction, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 49A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

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Microsemi Corporation

APTC80H15T3G

cuid stoc: 1759

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 28A, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

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Microsemi Corporation

APTC60HM35T3G

cuid stoc: 248

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 72A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

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Microsemi Corporation

APTM50TAM65FPG

cuid stoc: 545

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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