Trasraitheoirí - FETanna, MOSFETanna - Arra | Táirgí Leathsheoltóra Scoite | 7

APTM50DUM25TG

cuid stoc: 2781

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 149A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50DUM35TG

cuid stoc: 2820

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 99A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM50DUM19G

cuid stoc: 2832

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 163A, Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DUM17G

cuid stoc: 2758

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 180A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM50DSKM65T3G

cuid stoc: 3279

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DHM75TG

cuid stoc: 2739

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 46A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50DSK10T3G

cuid stoc: 2805

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 37A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50DHM65TG

cuid stoc: 3354

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51A, Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50AM25FTG

cuid stoc: 2755

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 149A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM50AM70FT1G

cuid stoc: 2771

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 50A, Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM50A15FT1G

cuid stoc: 2761

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A, Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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Microsemi Corporation

APTM50AM19STG

cuid stoc: 2747

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 170A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 85A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM20DUM10TG

cuid stoc: 2803

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20TDUM16PG

cuid stoc: 2825

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DUM05TG

cuid stoc: 2827

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 333A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM20DHM10G

cuid stoc: 2785

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 175A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20DHM16TG

cuid stoc: 2733

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 104A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM20DHM08G

cuid stoc: 2824

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 208A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM20AM05FTG

cuid stoc: 2762

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 333A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 8mA,

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Microsemi Corporation

APTM120TDU57PG

cuid stoc: 2732

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120H57FT3G

cuid stoc: 2766

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DU29TG

cuid stoc: 2792

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A, Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

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Microsemi Corporation

APTM120DSK57T3G

cuid stoc: 2791

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A80FT1G

cuid stoc: 2744

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14A, Rds On (Max) @ Id, Vgs: 960 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120DDA57T3G

cuid stoc: 2827

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 17A, Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM120A65FT1G

cuid stoc: 2750

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1200V (1.2kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A, Rds On (Max) @ Id, Vgs: 780 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10TDUM19PG

cuid stoc: 2820

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM10TDUM09PG

cuid stoc: 2746

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10HM09FTG

cuid stoc: 2809

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DUM05TG

cuid stoc: 2783

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 278A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

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Microsemi Corporation

APTM10DHM09TG

cuid stoc: 2789

Cineál FET: 2 N-Channel (Dual) Asymmetrical, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM19T3G

cuid stoc: 2824

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 70A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

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Microsemi Corporation

APTM100TDU35PG

cuid stoc: 2796

Cineál FET: 6 N-Channel (3-Phase Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 22A, Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

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Microsemi Corporation

APTM10DDAM09T3G

cuid stoc: 2768

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 139A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

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Microsemi Corporation

APTM100DUM90G

cuid stoc: 2758

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 78A, Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

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Microsemi Corporation

APTM100H80FT1G

cuid stoc: 2809

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A, Rds On (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

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