cuid stoc: 2760
Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Silicon Carbide (SiC), Draenáil chuig Voltas Foinse (Vdss): 1000V (1kV), Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 36A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,