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Trasraitheoirí - FETnna, MOSFETanna - Aonai

TK39N60X,S1F
Toshiba Semiconductor and Storage

TK39N60X,S1F

cuid stoc: 10187

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 38.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 12.5A, 10V,

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TK39N60W,S1VF
Toshiba Semiconductor and Storage

TK39N60W,S1VF

cuid stoc: 6462

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 38.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V,

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TK14E65W5,S1X
Toshiba Semiconductor and Storage

TK14E65W5,S1X

cuid stoc: 21833

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V,

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TK100E06N1,S1X
Toshiba Semiconductor and Storage

TK100E06N1,S1X

cuid stoc: 26630

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V,

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TK30A06N1,S4X
Toshiba Semiconductor and Storage

TK30A06N1,S4X

cuid stoc: 71133

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V,

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TK32A12N1,S4X
Toshiba Semiconductor and Storage

TK32A12N1,S4X

cuid stoc: 47247

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 120V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 32A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 16A, 10V,

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TK380A60Y,S4X
Toshiba Semiconductor and Storage

TK380A60Y,S4X

cuid stoc: 47599

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9.7A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V,

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TK12A60U(Q,M)
Toshiba Semiconductor and Storage

TK12A60U(Q,M)

cuid stoc: 18965

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V,

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TK8Q65W,S1Q
Toshiba Semiconductor and Storage

TK8Q65W,S1Q

cuid stoc: 42602

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.9A, 10V,

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TK40E10N1,S1X
Toshiba Semiconductor and Storage

TK40E10N1,S1X

cuid stoc: 36803

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 90A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V,

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TK20N60W5,S1VF
Toshiba Semiconductor and Storage

TK20N60W5,S1VF

cuid stoc: 18577

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 175 mOhm @ 10A, 10V,

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TK58A06N1,S4X
Toshiba Semiconductor and Storage

TK58A06N1,S4X

cuid stoc: 49488

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 58A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 29A, 10V,

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TK62J60W,S1VQ
Toshiba Semiconductor and Storage

TK62J60W,S1VQ

cuid stoc: 4562

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 61.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 30.9A, 10V,

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TK65A10N1,S4X
Toshiba Semiconductor and Storage

TK65A10N1,S4X

cuid stoc: 23986

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 65A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 32.5A, 10V,

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TK30E06N1,S1X
Toshiba Semiconductor and Storage

TK30E06N1,S1X

cuid stoc: 67207

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 43A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V,

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TK25A60X,S5X
Toshiba Semiconductor and Storage

TK25A60X,S5X

cuid stoc: 16567

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V,

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TK100L60W,VQ
Toshiba Semiconductor and Storage

TK100L60W,VQ

cuid stoc: 2142

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V,

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TK100E08N1,S1X
Toshiba Semiconductor and Storage

TK100E08N1,S1X

cuid stoc: 11910

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V,

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TK35A08N1,S4X
Toshiba Semiconductor and Storage

TK35A08N1,S4X

cuid stoc: 63170

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 35A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.2 mOhm @ 17.5A, 10V,

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TK10A80E,S4X
Toshiba Semiconductor and Storage

TK10A80E,S4X

cuid stoc: 27566

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 800V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V,

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TK72E08N1,S1X
Toshiba Semiconductor and Storage

TK72E08N1,S1X

cuid stoc: 27799

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 72A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 36A, 10V,

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TK11A65W,S5X
Toshiba Semiconductor and Storage

TK11A65W,S5X

cuid stoc: 32419

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11.1A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V,

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TK100E10N1,S1X
Toshiba Semiconductor and Storage

TK100E10N1,S1X

cuid stoc: 18392

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 50A, 10V,

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TK3A60DA(Q,M)
Toshiba Semiconductor and Storage

TK3A60DA(Q,M)

cuid stoc: 382

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V,

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TK34A10N1,S4X
Toshiba Semiconductor and Storage

TK34A10N1,S4X

cuid stoc: 42839

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V,

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TK9A90E,S4X
Toshiba Semiconductor and Storage

TK9A90E,S4X

cuid stoc: 30070

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 900V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V,

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TK14N65W,S1F
Toshiba Semiconductor and Storage

TK14N65W,S1F

cuid stoc: 21636

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V,

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TK25A60X5,S5X
Toshiba Semiconductor and Storage

TK25A60X5,S5X

cuid stoc: 14447

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V,

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TK14A65W,S5X
Toshiba Semiconductor and Storage

TK14A65W,S5X

cuid stoc: 23555

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 250 mOhm @ 6.9A, 10V,

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SSM3J118TU(TE85L)
Toshiba Semiconductor and Storage

SSM3J118TU(TE85L)

cuid stoc: 345

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.4A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 650mA, 10V,

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TK16E60W,S1VX
Toshiba Semiconductor and Storage

TK16E60W,S1VX

cuid stoc: 16991

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

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TK5Q60W,S1VQ
Toshiba Semiconductor and Storage

TK5Q60W,S1VQ

cuid stoc: 39454

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.4A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V,

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TK28N65W,S1F
Toshiba Semiconductor and Storage

TK28N65W,S1F

cuid stoc: 11755

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 650V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 27.6A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 13.8A, 10V,

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SSM3J35MFV,L3F
Toshiba Semiconductor and Storage

SSM3J35MFV,L3F

cuid stoc: 158355

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 100mA (Ta), Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V,

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TK40E06N1,S1X
Toshiba Semiconductor and Storage

TK40E06N1,S1X

cuid stoc: 69827

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 20A, 10V,

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TK16N60W,S1VF
Toshiba Semiconductor and Storage

TK16N60W,S1VF

cuid stoc: 14130

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15.8A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V,

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