Trasraitheoirí - FETnna, MOSFETanna - Aonai

SQD15N06-42L_GE3

SQD15N06-42L_GE3

cuid stoc: 176160

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 10A, 10V,

SQJA60EP-T1_GE3

SQJA60EP-T1_GE3

cuid stoc: 7610

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 8A, 10V,

SQJA46EP-T1_GE3

SQJA46EP-T1_GE3

cuid stoc: 136651

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 10A, 10V,

SI4686DY-T1-GE3

SI4686DY-T1-GE3

cuid stoc: 105767

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18.2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V,

SI7463ADP-T1-GE3

SI7463ADP-T1-GE3

cuid stoc: 130295

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 46A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V,

SQS850EN-T1_GE3

SQS850EN-T1_GE3

cuid stoc: 7512

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 6.1A, 10V,

SQJ481EP-T1_GE3

SQJ481EP-T1_GE3

cuid stoc: 5762

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 10A, 10V,

SQS460EN-T1_GE3

SQS460EN-T1_GE3

cuid stoc: 140964

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V,

SI7110DN-T1-E3

SI7110DN-T1-E3

cuid stoc: 107392

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 13.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V,

SISS98DN-T1-GE3

SISS98DN-T1-GE3

cuid stoc: 153181

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14.1A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 7A, 10V,

SI7454DDP-T1-GE3

SI7454DDP-T1-GE3

cuid stoc: 105750

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 21A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V,

SQJA90EP-T1_GE3

SQJA90EP-T1_GE3

cuid stoc: 136734

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 10A, 10V,

SIR818DP-T1-GE3

SIR818DP-T1-GE3

cuid stoc: 123546

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 50A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V,

SQJ443EP-T1_GE3

SQJ443EP-T1_GE3

cuid stoc: 141599

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 18A, 10V,

SI4838BDY-T1-GE3

SI4838BDY-T1-GE3

cuid stoc: 101233

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 15A, 4.5V,

SIRA52ADP-T1-RE3

SIRA52ADP-T1-RE3

cuid stoc: 7771

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 41.6A (Ta), 131A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.63 mOhm @ 15A, 10V,

SQJA84EP-T1_GE3

SQJA84EP-T1_GE3

cuid stoc: 165125

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 80V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 46A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V,

SI4114DY-T1-GE3

SI4114DY-T1-GE3

cuid stoc: 165747

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V,

SUD23N06-31-GE3

SUD23N06-31-GE3

cuid stoc: 169901

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 21.4A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 31 mOhm @ 15A, 10V,

SI7415DN-T1-GE3

SI7415DN-T1-GE3

cuid stoc: 124223

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.6A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V,

SIS890DN-T1-GE3

SIS890DN-T1-GE3

cuid stoc: 117454

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 10A, 10V,

SIRA58DP-T1-GE3

SIRA58DP-T1-GE3

cuid stoc: 137092

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.65 mOhm @ 15A, 10V,

SQD25N06-22L_GE3

SQD25N06-22L_GE3

cuid stoc: 106761

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 20A, 10V,

SIR624DP-T1-GE3

SIR624DP-T1-GE3

cuid stoc: 137062

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18.6A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V,

SQJA02EP-T1_GE3

SQJA02EP-T1_GE3

cuid stoc: 136734

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 10A, 10V,

SIR622DP-T1-GE3

SIR622DP-T1-GE3

cuid stoc: 97050

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 150V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 51.6A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 17.7 mOhm @ 20A, 10V,

SIR618DP-T1-GE3

SIR618DP-T1-GE3

cuid stoc: 142633

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14.2A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 7.5V, 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 8A, 10V,

SI4464DY-T1-GE3

SI4464DY-T1-GE3

cuid stoc: 159122

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 200V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.2A, 10V,

SI7460DP-T1-GE3

SI7460DP-T1-GE3

cuid stoc: 93630

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 18A, 10V,

SI7108DN-T1-GE3

SI7108DN-T1-GE3

cuid stoc: 99324

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 14A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V,

SQJ418EP-T1_GE3

SQJ418EP-T1_GE3

cuid stoc: 168693

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 100V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 48A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 10V,

SQJ446EP-T1_GE3

SQJ446EP-T1_GE3

cuid stoc: 7580

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V,

SI2318DS-T1-E3

SI2318DS-T1-E3

cuid stoc: 123205

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V,

SIRA50DP-T1-RE3

SIRA50DP-T1-RE3

cuid stoc: 7859

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 62.5A (Ta), 100A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1 mOhm @ 20A, 10V,

SI4848DY-T1-GE3

SI4848DY-T1-GE3

cuid stoc: 124194

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 150V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.7A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V,