Trasraitheoirí - FETanna, MOSFETanna - Arra | Táirgí Leathsheoltóra Scoite | 18

19MT050XF

cuid stoc: 2704

Cineál FET: 4 N-Channel (H-Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 500V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 31A, Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 6V @ 250µA,

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Vishay Siliconix

SI1033X-T1-GE3

cuid stoc: 174190

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 145mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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Vishay Siliconix

SIA777EDJ-T1-GE3

cuid stoc: 187147

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.5A, 4.5A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4505DY-T1-E3

cuid stoc: 118937

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, 8V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, 3.8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI4808DY-T1-E3

cuid stoc: 80900

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI7962DP-T1-E3

cuid stoc: 38892

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.1A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.1A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

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Vishay Siliconix

SI7900AEDN-T1-GE3

cuid stoc: 139913

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SUD50NP04-77P-T4E3

cuid stoc: 118918

Cineál FET: N and P-Channel, Common Drain, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI6968BEDQ-T1-GE3

cuid stoc: 192809

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.2A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI4936CDY-T1-E3

cuid stoc: 152475

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.8A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI3948DV-T1-GE3

cuid stoc: 139953

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI6975DQ-T1-E3

cuid stoc: 56765

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.3A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

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Vishay Siliconix

SI6975DQ-T1-GE3

cuid stoc: 89660

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.3A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 5mA (Min),

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Vishay Siliconix

SI6954ADQ-T1-GE3

cuid stoc: 102782

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.1A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI7904BDN-T1-GE3

cuid stoc: 165688

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4276DY-T1-E3

cuid stoc: 139906

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI4943BDY-T1-GE3

cuid stoc: 73684

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.3A, Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI6954ADQ-T1-E3

cuid stoc: 197681

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.1A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI8900EDB-T2-E1

cuid stoc: 45537

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.4A, Vgs (th) (Max) @ Id: 1V @ 1.1mA,

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Vishay Siliconix

SI7913DN-T1-GE3

cuid stoc: 93108

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6968BEDQ-T1-E3

cuid stoc: 118914

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.2A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI7904BDN-T1-E3

cuid stoc: 165763

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4948BEY-T1-GE3

cuid stoc: 125231

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.4A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4946BEY-T1-E3

cuid stoc: 150097

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.5A, Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4808DY-T1-GE3

cuid stoc: 80857

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

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Vishay Siliconix

SI3951DV-T1-GE3

cuid stoc: 199685

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.7A, Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI7923DN-T1-E3

cuid stoc: 101885

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.3A, Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI5902BDC-T1-E3

cuid stoc: 125159

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A (Tc), Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI5908DC-T1-GE3

cuid stoc: 118967

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.4A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIZ904DT-T1-GE3

cuid stoc: 140725

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 12A, 16A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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Vishay Siliconix

SI7923DN-T1-GE3

cuid stoc: 101842

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.3A, Rds On (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ918DT-T1-GE3

cuid stoc: 132159

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A, 28A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SI4505DY-T1-GE3

cuid stoc: 118954

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, 8V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, 3.8A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI7913DN-T1-E3

cuid stoc: 93083

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5A, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI4554DY-T1-GE3

cuid stoc: 106365

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SQ4282EY-T1_GE3

cuid stoc: 10808

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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