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Trasraitheoirí - FETanna, MOSFETanna - Arra

SIA920DJ-T1-GE3
Vishay Siliconix

SIA920DJ-T1-GE3

cuid stoc: 118547

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 8V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.3A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

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SI3588DV-T1-E3
Vishay Siliconix

SI3588DV-T1-E3

cuid stoc: 2762

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A, 570mA, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI4388DY-T1-GE3
Vishay Siliconix

SI4388DY-T1-GE3

cuid stoc: 2870

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10.7A, 11.3A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI5933DC-T1-GE3
Vishay Siliconix

SI5933DC-T1-GE3

cuid stoc: 2867

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.7A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SI4563DY-T1-E3
Vishay Siliconix

SI4563DY-T1-E3

cuid stoc: 2704

Cineál FET: N and P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI6969BDQ-T1-E3
Vishay Siliconix

SI6969BDQ-T1-E3

cuid stoc: 2784

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

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VQ1006P-E3
Vishay Siliconix

VQ1006P-E3

cuid stoc: 2906

Cineál FET: 4 N-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 90V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 400mA, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SI4942DY-T1-E3
Vishay Siliconix

SI4942DY-T1-E3

cuid stoc: 2870

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.3A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4940DY-T1-GE3
Vishay Siliconix

SI4940DY-T1-GE3

cuid stoc: 2808

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4816DY-T1-E3
Vishay Siliconix

SI4816DY-T1-E3

cuid stoc: 2905

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.3A, 7.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI5509DC-T1-E3
Vishay Siliconix

SI5509DC-T1-E3

cuid stoc: 2749

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.1A, 4.8A, Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI4914BDY-T1-GE3
Vishay Siliconix

SI4914BDY-T1-GE3

cuid stoc: 118908

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8.4A, 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

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SI4967DY-T1-E3
Vishay Siliconix

SI4967DY-T1-E3

cuid stoc: 2883

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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SI4940DY-T1-E3
Vishay Siliconix

SI4940DY-T1-E3

cuid stoc: 2875

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI3529DV-T1-GE3
Vishay Siliconix

SI3529DV-T1-GE3

cuid stoc: 2831

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A, 1.95A, Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI6924AEDQ-T1-E3
Vishay Siliconix

SI6924AEDQ-T1-E3

cuid stoc: 2801

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 28V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.1A, Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7901EDN-T1-GE3
Vishay Siliconix

SI7901EDN-T1-GE3

cuid stoc: 2866

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.3A, Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 800µA,

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SI7234DP-T1-GE3
Vishay Siliconix

SI7234DP-T1-GE3

cuid stoc: 47223

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A, Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7980DP-T1-GE3
Vishay Siliconix

SI7980DP-T1-GE3

cuid stoc: 96693

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI1026X-T1-E3
Vishay Siliconix

SI1026X-T1-E3

cuid stoc: 2694

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 305mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI1551DL-T1-GE3
Vishay Siliconix

SI1551DL-T1-GE3

cuid stoc: 2873

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 290mA, 410mA, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SI7872DP-T1-GE3
Vishay Siliconix

SI7872DP-T1-GE3

cuid stoc: 71532

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7980DP-T1-E3
Vishay Siliconix

SI7980DP-T1-E3

cuid stoc: 2862

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SI4539ADY-T1-E3
Vishay Siliconix

SI4539ADY-T1-E3

cuid stoc: 2626

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.4A, 3.7A, Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4923DY-T1-E3
Vishay Siliconix

SI4923DY-T1-E3

cuid stoc: 2886

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.2A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4910DY-T1-E3
Vishay Siliconix

SI4910DY-T1-E3

cuid stoc: 2756

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.6A, Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI3993DV-T1-E3
Vishay Siliconix

SI3993DV-T1-E3

cuid stoc: 198401

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.8A, Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI4972DY-T1-GE3
Vishay Siliconix

SI4972DY-T1-GE3

cuid stoc: 2881

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10.8A, 7.2A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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VQ1001P-E3
Vishay Siliconix

VQ1001P-E3

cuid stoc: 2920

Cineál FET: 4 N-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 830mA, Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SI7958DP-T1-GE3
Vishay Siliconix

SI7958DP-T1-GE3

cuid stoc: 2819

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.2A, Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI6933DQ-T1-GE3
Vishay Siliconix

SI6933DQ-T1-GE3

cuid stoc: 2892

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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SI4973DY-T1-GE3
Vishay Siliconix

SI4973DY-T1-GE3

cuid stoc: 2865

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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SI7983DP-T1-GE3
Vishay Siliconix

SI7983DP-T1-GE3

cuid stoc: 2899

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.7A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,

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SI1563EDH-T1-E3
Vishay Siliconix

SI1563EDH-T1-E3

cuid stoc: 2699

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.13A, 880mA, Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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SI1539DL-T1-E3
Vishay Siliconix

SI1539DL-T1-E3

cuid stoc: 2765

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 540mA, 420mA, Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

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SI7844DP-T1-GE3
Vishay Siliconix

SI7844DP-T1-GE3

cuid stoc: 2794

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.4A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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