Trasraitheoirí - FETanna, MOSFETanna - Arra

SI7216DN-T1-GE3

SI7216DN-T1-GE3

cuid stoc: 113546

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4963BDY-T1-E3

SI4963BDY-T1-E3

cuid stoc: 147270

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.9A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI1926DL-T1-GE3

SI1926DL-T1-GE3

cuid stoc: 137693

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 370mA, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SQJQ906E-T1_GE3

SQJQ906E-T1_GE3

cuid stoc: 8627

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 95A (Tc), Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

SI4542DY-T1-E3

SI4542DY-T1-E3

cuid stoc: 5348

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SIZ320DT-T1-GE3

SIZ320DT-T1-GE3

cuid stoc: 9923

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 25V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), 40A (Tc), Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 8A, 10V, 4.24 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SIZ926DT-T1-GE3

SIZ926DT-T1-GE3

cuid stoc: 127180

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 25V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 5A, 10V, 2.2 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIZ328DT-T1-GE3

SIZ328DT-T1-GE3

cuid stoc: 221

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 25V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIZF916DT-T1-GE3

SIZF916DT-T1-GE3

cuid stoc: 281

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 23A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

SI7905DN-T1-E3

SI7905DN-T1-E3

cuid stoc: 73624

Cineál FET: 2 P-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1900DL-T1-GE3

SI1900DL-T1-GE3

cuid stoc: 337

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 630mA (Ta), 590mA (Ta), Rds On (Max) @ Id, Vgs: 480 mOhm @ 590mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SISB46DN-T1-GE3

SISB46DN-T1-GE3

cuid stoc: 104289

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A (Tc), Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIZ988DT-T1-GE3

SIZ988DT-T1-GE3

cuid stoc: 16265

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 40A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V, 4.1 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA,

SI6913DQ-T1-E3

SI6913DQ-T1-E3

cuid stoc: 71472

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.9A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 400µA,

SI4670DY-T1-E3

SI4670DY-T1-E3

cuid stoc: 139946

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 25V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI5922DU-T1-GE3

SI5922DU-T1-GE3

cuid stoc: 127635

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A (Tc), Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIZ348DT-T1-GE3

SIZ348DT-T1-GE3

cuid stoc: 277

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 18A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 7.12 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

SIA931DJ-T1-GE3

SIA931DJ-T1-GE3

cuid stoc: 160155

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI5904DC-T1-E3

SI5904DC-T1-E3

cuid stoc: 2972

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.1A, Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI4965DY-T1-GE3

SI4965DY-T1-GE3

cuid stoc: 3019

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 8V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI1902CDL-T1-GE3

SI1902CDL-T1-GE3

cuid stoc: 181662

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.1A, Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SIA936EDJ-T1-GE3

SIA936EDJ-T1-GE3

cuid stoc: 3020

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

SQ4532AEY-T1_GE3

SQ4532AEY-T1_GE3

cuid stoc: 10809

Cineál FET: N and P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.3A (Tc), 5.3A (Tc), Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.9A, 10V, 70 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4532ADY-T1-GE3

SI4532ADY-T1-GE3

cuid stoc: 135915

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.7A, 3A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI7236DP-T1-E3

SI7236DP-T1-E3

cuid stoc: 45599

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI4936BDY-T1-GE3

SI4936BDY-T1-GE3

cuid stoc: 125167

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.9A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SIZ902DT-T1-GE3

SIZ902DT-T1-GE3

cuid stoc: 110652

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIZ720DT-T1-GE3

SIZ720DT-T1-GE3

cuid stoc: 109371

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 16A, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 16.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI4200DY-T1-GE3

SI4200DY-T1-GE3

cuid stoc: 161224

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 25V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.3A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SQJ560EP-T1_GE3

SQJ560EP-T1_GE3

cuid stoc: 9941

Cineál FET: N and P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 30A (Tc), 18A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4542DY-T1-GE3

SI4542DY-T1-GE3

cuid stoc: 2980

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SQJ941EP-T1-GE3

SQJ941EP-T1-GE3

cuid stoc: 3133

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SQJ200EP-T1_GE3

SQJ200EP-T1_GE3

cuid stoc: 165186

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A, 60A, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

cuid stoc: 98746

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 60A (Tc), Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

cuid stoc: 89691

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.9A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI5517DU-T1-GE3

SI5517DU-T1-GE3

cuid stoc: 139934

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,