Trasraitheoirí - FETanna, MOSFETanna - Arra

SI9934BDY-T1-GE3

SI9934BDY-T1-GE3

cuid stoc: 2797

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.8A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

SI3951DV-T1-E3

SI3951DV-T1-E3

cuid stoc: 2720

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.7A, Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

VQ1001P

VQ1001P

cuid stoc: 2888

Cineál FET: 4 N-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 830mA, Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SI6955ADQ-T1-GE3

SI6955ADQ-T1-GE3

cuid stoc: 3376

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.5A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI7983DP-T1-E3

SI7983DP-T1-E3

cuid stoc: 2716

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.7A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,

SI8904EDB-T2-E1

SI8904EDB-T2-E1

cuid stoc: 2770

Cineál FET: 2 N-Channel (Dual) Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.8A, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI4511DY-T1-GE3

SI4511DY-T1-GE3

cuid stoc: 2835

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7.2A, 4.6A, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

SI4814BDY-T1-GE3

SI4814BDY-T1-GE3

cuid stoc: 2891

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 10A, 10.5A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

cuid stoc: 24358

Cineál FET: 2 N-Channel (Dual), Schottky, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 20A (Tc), 60A (Tc), Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SIA917DJ-T1-GE3

SIA917DJ-T1-GE3

cuid stoc: 2760

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI5504DC-T1-E3

SI5504DC-T1-E3

cuid stoc: 2750

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SI4966DY-T1-GE3

SI4966DY-T1-GE3

cuid stoc: 70490

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI1970DH-T1-E3

SI1970DH-T1-E3

cuid stoc: 2698

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.3A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI5943DU-T1-E3

SI5943DU-T1-E3

cuid stoc: 2795

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI1035X-T1-GE3

SI1035X-T1-GE3

cuid stoc: 103062

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 180mA, 145mA, Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 400mV @ 250µA (Min),

SI9936BDY-T1-E3

SI9936BDY-T1-E3

cuid stoc: 2912

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI3911DV-T1-E3

SI3911DV-T1-E3

cuid stoc: 2792

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.8A, Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI4565ADY-T1-E3

SI4565ADY-T1-E3

cuid stoc: 2757

Cineál FET: N and P-Channel, Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.6A, 5.6A, Rds On (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI7945DP-T1-GE3

SI7945DP-T1-GE3

cuid stoc: 2809

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 7A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI6993DQ-T1-GE3

SI6993DQ-T1-GE3

cuid stoc: 2801

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.6A, Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI5905BDC-T1-E3

SI5905BDC-T1-E3

cuid stoc: 2802

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 8V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI5943DU-T1-GE3

SI5943DU-T1-GE3

cuid stoc: 3377

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6A, Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI5935DC-T1-GE3

SI5935DC-T1-GE3

cuid stoc: 2861

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A, Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI3586DV-T1-GE3

SI3586DV-T1-GE3

cuid stoc: 2865

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

SIA511DJ-T1-GE3

SIA511DJ-T1-GE3

cuid stoc: 2748

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 12V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI1970DH-T1-GE3

SI1970DH-T1-GE3

cuid stoc: 3345

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 1.3A, Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI7911DN-T1-GE3

SI7911DN-T1-GE3

cuid stoc: 3351

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.2A, Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SIA914DJ-T1-E3

SIA914DJ-T1-E3

cuid stoc: 2809

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A, Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SQJ940EP-T1_GE3

SQJ940EP-T1_GE3

cuid stoc: 137151

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 15A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4804BDY-T1-E3

SI4804BDY-T1-E3

cuid stoc: 2731

Cineál FET: 2 N-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1025X-T1-E3

SI1025X-T1-E3

cuid stoc: 2759

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 190mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1033X-T1-E3

SI1033X-T1-E3

cuid stoc: 2716

Cineál FET: 2 P-Channel (Dual), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 145mA, Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

SI4544DY-T1-E3

SI4544DY-T1-E3

cuid stoc: 2827

Cineál FET: N and P-Channel, Common Drain, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

SIS902DN-T1-GE3

SIS902DN-T1-GE3

cuid stoc: 5353

Cineál FET: 2 N-Channel (Dual), Gné FET: Standard, Draenáil chuig Voltas Foinse (Vdss): 75V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4A, Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4830ADY-T1-GE3

SI4830ADY-T1-GE3

cuid stoc: 2864

Cineál FET: 2 N-Channel (Half Bridge), Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 5.7A, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI5504DC-T1-GE3

SI5504DC-T1-GE3

cuid stoc: 2847

Cineál FET: N and P-Channel, Gné FET: Logic Level Gate, Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),