Menu
GaeilgeGaeilge
RFQ / Ordú
0RFQ / Ordú

Trasraitheoirí - FETnna, MOSFETanna - Aonai

TSM2305CX RFG
Taiwan Semiconductor Corporation

TSM2305CX RFG

cuid stoc: 38756

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.2A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.2A, 4.5V,

Liostaí Liostaí
TSM60N380CZ C0G
Taiwan Semiconductor Corporation

TSM60N380CZ C0G

cuid stoc: 8195

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V,

Liostaí Liostaí
TSM60NB1R4CH C5G
Taiwan Semiconductor Corporation

TSM60NB1R4CH C5G

cuid stoc: 46742

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 900mA, 10V,

Liostaí Liostaí
TSM2306CX RFG
Taiwan Semiconductor Corporation

TSM2306CX RFG

cuid stoc: 58112

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.5A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.5A, 10V,

Liostaí Liostaí
TSM3401CX RFG
Taiwan Semiconductor Corporation

TSM3401CX RFG

cuid stoc: 38771

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V,

Liostaí Liostaí
TSM210N02CX RFG
Taiwan Semiconductor Corporation

TSM210N02CX RFG

cuid stoc: 38753

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 6.7A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 4.5V,

Liostaí Liostaí
TSM850N06CX RFG
Taiwan Semiconductor Corporation

TSM850N06CX RFG

cuid stoc: 45227

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.3A, 10V,

Liostaí Liostaí
TSM170N06CP ROG
Taiwan Semiconductor Corporation

TSM170N06CP ROG

cuid stoc: 53408

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 38A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V,

Liostaí Liostaí
TSM60N380CH C5G
Taiwan Semiconductor Corporation

TSM60N380CH C5G

cuid stoc: 8167

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 11A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V,

Liostaí Liostaí
TSM2309CX RFG
Taiwan Semiconductor Corporation

TSM2309CX RFG

cuid stoc: 80161

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.1A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 3A, 10V,

Liostaí Liostaí
TSM2307CX RFG
Taiwan Semiconductor Corporation

TSM2307CX RFG

cuid stoc: 74840

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V,

Liostaí Liostaí
TSM2312CX RFG
Taiwan Semiconductor Corporation

TSM2312CX RFG

cuid stoc: 74787

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 20V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.9A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.9A, 4.5V,

Liostaí Liostaí
TSM60N600CI C0G
Taiwan Semiconductor Corporation

TSM60N600CI C0G

cuid stoc: 5860

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 8A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V,

Liostaí Liostaí
TSM2N7002KCX RFG
Taiwan Semiconductor Corporation

TSM2N7002KCX RFG

cuid stoc: 80150

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 300mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 300mA, 10V,

Liostaí Liostaí
TSM2318CX RFG
Taiwan Semiconductor Corporation

TSM2318CX RFG

cuid stoc: 80118

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 40V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.9A (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V,

Liostaí Liostaí
TSM60N1R4CH C5G
Taiwan Semiconductor Corporation

TSM60N1R4CH C5G

cuid stoc: 7569

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.3A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V,

Liostaí Liostaí
TSM60N900CH C5G
Taiwan Semiconductor Corporation

TSM60N900CH C5G

cuid stoc: 7707

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.3A, 10V,

Liostaí Liostaí
TSM60N1R4CP ROG
Taiwan Semiconductor Corporation

TSM60N1R4CP ROG

cuid stoc: 5813

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 3.3A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V,

Liostaí Liostaí
TSM60N900CP ROG
Taiwan Semiconductor Corporation

TSM60N900CP ROG

cuid stoc: 5819

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 600V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 4.5A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.3A, 10V,

Liostaí Liostaí
TSM085P03CS RLG
Taiwan Semiconductor Corporation

TSM085P03CS RLG

cuid stoc: 7421

Cineál FET: P-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 34A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13A, 10V,

Liostaí Liostaí
TSM180N03PQ33 RGG
Taiwan Semiconductor Corporation

TSM180N03PQ33 RGG

cuid stoc: 5747

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 25A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V,

Liostaí Liostaí
TSM038N03PQ33 RGG
Taiwan Semiconductor Corporation

TSM038N03PQ33 RGG

cuid stoc: 7367

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 78A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V,

Liostaí Liostaí
TSM2N7000KCT B0G
Taiwan Semiconductor Corporation

TSM2N7000KCT B0G

cuid stoc: 5812

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 60V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 300mA (Ta), Voltas Tiomáint (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 100mA, 10V,

Liostaí Liostaí
TSM060N03PQ33 RGG
Taiwan Semiconductor Corporation

TSM060N03PQ33 RGG

cuid stoc: 7347

Cineál FET: N-Channel, Teicneolaíocht: MOSFET (Metal Oxide), Draenáil chuig Voltas Foinse (Vdss): 30V, Reatha - Draenáil Leanúnach (Id) @ 25 ° C.: 62A (Tc), Voltas Tiomáint (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V,

Liostaí Liostaí